Effect of boron and fluorine incorporation in SiON gate insulator with optimized nitrogen profile

被引：2

作者：

Sasaki, T ^{[1
]}

Ootsuka, F ^{[1
]}

Ozaki, H ^{[1
]}

Hoshi, T ^{[1
]}

Tomikawa, M ^{[1
]}

Yasuhira, M ^{[1
]}

Arikado, T ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 4B期

关键词：

negative bias temperature instability; interface states; boron penetration; fluorine; silicon nitride; nitrogen depth profile; capped SiN;

D O I：

10.1143/JJAP.43.1837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, the effects of boron and fluorine in the SiO2/Si interface region with the optimized nitrogen profile are described. Fluorine in the interface region has been found to terminate the interface states and improve negative bias temperature instability (NBTI). However, fluorine enhances the boron penetration. The ideal nitrogen profile has been achieved in order to suppress NBTI characteristics by applying the SiN/SiO2 stack structure.

引用

页码：1837 / 1842

页数：6

共 9 条

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