Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer

被引：19
|
作者：
Cho, Jaehyun [1 ]
Duy Phong Pham [2 ]
Jung, Junhee [1 ]
Shin, Chonghoon [1 ]
Park, Jinjoo [2 ]
Kim, Sangho [1 ]
Le, Anh Huy Tuan [2 ]
Park, Hyeongsik [2 ]
Iftiquar, S. M. [2 ]
Yi, Junsin [1 ,2 ]
机构：
[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon 440746, South Korea
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2016年 / 41卷
关键词：
a-SiGe:H thin film solar cells; Hydrogenated microcrystalline silicon oxide; p-type contact layer; A-SIGE-H; TRANSPARENT CONDUCTING OXIDE; OPEN-CIRCUIT VOLTAGE; MICROCRYSTALLINE SILICON; WINDOW LAYER; EFFICIENCY; QUALITY; DEPOSITION; BUFFER; ENHANCEMENT;
D O I：
10.1016/j.mssp.2015.10.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we report an appreciably increased efficiency from 6% up to 9.1% of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells by using a combination of different p-doped window layers, such as boron doped hydrogenated amorphous silicon (p-a-Si:H), amorphous silicon oxide (p-a-SiOx:H), microcrystalline silicon (p-mu c-Si:H), and microcrystalline silicon oxide (p-mu c-SiOx:H). Optoelectronic properties and the role of these p-layers in the enhancement of a-SiGe:H cell efficiency were also examined and discussed. An improvement of 1.62 mA/cm(2) in the short-circuit current density (J(sc)) is attributed to the higher band gap of p-type silicon oxide layers. In addition, an increase in open-circuit voltage (V-oc) by 150 mV and fill factor (FF) by 6.93% is ascribed to significantly improved front TCO/p-layer interface contact. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：480 / 484
页数：5
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