Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors

被引：2

作者：

Deng, Shao-You

Wu, Chang-Han

Lee, Joseph Ya-min

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 08期

关键词：

transient; HBT; hydrogen; InGaP;

D O I：

10.1016/j.mejo.2005.12.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transient effect on the current gain of InGaP hetero-junction bipolar transistors was studied. It was found that this transient effect was caused by hydrogen and eliminated after three or more cycles of thermal annealing at 250 degrees C in nitrogen. A model based on the carbon-hydrogen complex dissociation by thermal anneal is proposed to explain this observation. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：678 / 680

页数：3

共 7 条

[1] Reliability physics of compound semiconductor transistors for microwave applications [J].