A High-Mobility Hole Bilayer in a Germanium Double Quantum Well

被引：6

作者：

Tosato, Alberto ^{[1
,2
]}

Ferrari, Beatrice ^{[1
,2
]}

Sammak, Amir ^{[1
,2
,3
,4
]}

Hamilton, Alexander R. ^{[5
,6
]}

Veldhorst, Menno ^{[1
,2
]}

Virgilio, Michele ^{[7
]}

Scappucci, Giordano ^{[1
,2
]}

机构：

[1] Delft Univ Technol, QuTech, POB 5046, NL-2600 GA Delft, Netherlands

[2] Delft Univ Technol, Kavli Inst Nanosci, POB 5046, NL-2600 GA Delft, Netherlands

[3] QuTech, Stieltjesweg 1, NL-2628 CK Delft, Netherlands

[4] TNO, Stieltjesweg 1, NL-2628 CK Delft, Netherlands

[5] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia

[6] Univ New South Wales, ARC Ctr Excellence Future Low Energy Elect Techno, Sydney, NSW 2052, Australia

[7] Univ Pisa, Dipartimento Fis E Fermi, Largo Pontecorvo 3, I-56127 Pisa, Italy

来源：

ADVANCED QUANTUM TECHNOLOGIES | 2022年 / 5卷 / 05期

关键词：

3D; circuits; germanium; holes; qubits; 2-DIMENSIONAL ELECTRON; SUBBAND;

D O I：

10.1002/qute.202100167

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34x105cm2V-1s-1$3.34\times 10<^>{5}\ {{\rm cm}<^>2\nobreakspace {\rm V}<^>{-1}\nobreakspace {\rm s}<^>{-1}}$ and a low percolation density of 2.38x1010cm-2$2.38 \times 10<^>{10}\ {{\rm cm}<^>{-2}}$. The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of 2.0x1011cm-2$2.0\times 10<^>{11}\ {{\rm cm}<^>{-2}}$ the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of approximate to 0.69meV$\approx {0.69}\ {\rm meV}$ is estimated, in agreement with Schrodinger-Poisson simulations.

引用

页数：5

共 25 条

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