Process of crystallization in thin amorphous tin oxide film

被引：22
作者：
Kobayashi, T
Kimura, Y
Suzuki, H
Sato, T
Tanigaki, T
Saito, Y
Kaito, C
机构：
[1] Ritsumeikan Univ, Fac Sci & Engn, Dept Nanophys Frontier Project, Shiga 5258577, Japan
[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 243卷 / 01期
关键词：
crystal morphology; crystal structure; crystallites; oxides;
D O I：
10.1016/S0022-0248(02)01445-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Amorphous tin oxide films deposited on carbon substrates have been studied by high-resolution transmission electron microscopy. As-deposited film was composed of a mixture of microcrystallites of SnO, SnO2 and SnO3 with size of 2 nm. Crystallization took place above 450degreesC. SnO crystals appeared between 450degreesC and 500degreesC, whereas SnO2 crystals appeared above 550degreesC. The appearance of beta-tin crystals with the reduction of tin oxide has been verified using the heating stage of the electron microscope. A drop of liquid tin was recognized upon heating above 500degreesC. The difference in crystallization upon applying an electron beam, synchrotron radiation and heating in vacuum has been summarized and discussed with respect to the problem of the excitation of crystallites. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：143 / 150
页数：8
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