Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density

被引：0

作者：

Ebihara, Yasuhiro ^{[1
]}

Uehara, Junichi ^{[1
]}

Ichimura, Aiko ^{[1
]}

Mitani, Shuhei ^{[1
]}

Noborio, Masato ^{[1
]}

Takeuchi, Yuichi ^{[1
]}

Tsuruta, Kazuhiro ^{[1
]}

机构：

[1] DENSO Corp, Nisshin, Aichi 4700111, Japan

来源：

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年

关键词：

SiC-MOSFET; bipolar degradation; body-diode;

D O I：

10.1109/ispsd.2019.8757567

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The bipolar degradation of Deep-p encapsulated 4H-SiC trench MOSFETs was investigated by using the pulse-current conduction system up to ultra-high current density. The fabricated MOSFETs exhibit the low hole injection compared with the PN diodes and conventional MOSFETs, resulted in the fabricated MOSFETs suppressed the bipolar degradation up to a current density of 3000 A/cm(2).

引用

页码：35 / 38

页数：4

共 11 条

[1] Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes
Bergman, JP
Lendenmann, H
Nilsson, PÅ
Lindefelt, U
Skytt, P
[J]. SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 299 - 302
[2] Status and prospects for SiC power MOSFETs
Cooper, JA
Melloch, MR
Singh, R
Agarwal, A
Palmour, JW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) : 658 - 664
[3] Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers
Danno, Katsunori
Kimoto, Tsunenobu
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)
[4] Ebihara Y., 2018, P ISPSD, P89
[5] Hirao N., 2011, DENSO TECH REV, V16, P30
[6] Ichimura Aiko, 2018, Materials Science Forum, V924, P707, DOI 10.4028/www.scientific.net/MSF.924.707
[7] Iijima A., ECSCRM 2018
[8] Reduction of deep levels generated by ion implantation into n- and p-type 4H-SiC
Kawahara, Koutarou
Suda, Jun
Pensl, Gerhard
Kimoto, Tsunenobu
[J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (03)
[9] Degradation of hexagonal silicon-carbide-based bipolar devices
Skowronski, M
Ha, S
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)
[10] Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes
Tawara, T.
Matsunaga, S.
Fujimoto, T.
Ryo, M.
Miyazato, M.
Miyazawa, T.
Takenaka, K.
Miyajima, M.
Otsuki, A.
Yonezawa, Y.
Kato, T.
Okumura, H.
Kimoto, T.
Tsuchida, H.
[J]. JOURNAL OF APPLIED PHYSICS, 2018, 123 (02)

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