Well-ordered ultra-thin Al2O3 film formation on NiAl(110) by high-temperature oxidation

被引：14
作者：
Yoshitake, M [1 ]
Lay, TT [1 ]
Song, WJ [1 ]
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan
来源：
SURFACE SCIENCE | 2004年 / 564卷 / 1-3期
关键词：
aluminum oxide; oxidation; crystallization; low energy electron diffraction (LEED); X-ray photoelectron spectroscopy;
D O I：
10.1016/j.susc.2004.06.197
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
NiAl(I 10) was oxidized at high temperature in an ultra-high vacuum. To examine the range of oxidation condition for a well-ordered ultra-thin Al2O3 film formation, oxidation was carried out at 970, 1070, and 1100 K by exposing the specimen to 1200 L oxygen under partial oxygen pressures of 6.6 x 10(-5) and 6.6 x 10(-6) Pa. LEED observation revealed that a crystalline Al2O3 formed at 1070 K under 6.6 x 10(-6) Pa oxygen was best ordered among the present experimental conditions. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：211 / 217
页数：7
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