Germanium profile design options for SiGe LEC HBTs

被引：7
作者：
Schroter, M
Tran, H
Kraus, W
机构：
[1] Tech Univ Dresden, Dept Electron Devices & Integrated Circuits, D-01062 Dresden, Germany
[2] Atmel Germany, D-7100 Heilbronn, Germany
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 07期
关键词：
D O I：
10.1016/j.sse.2003.12.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon-Germanium (SiGe) heterojunction bipolar transistors (HBTs) with a low emitter doping concentration (LEC) are investigated with respect to their electrical characteristics in dependence of the Germanium profile shape. The study is based on one-dimensional (1D) device simulation using a realistic doping and Ge profile as baseline. While keeping the doping profile unchanged the Ge profile is modified to evaluate its impact on major electrical figure of merits such as transit frequency, ideality factor, early voltage, noise figure, as well as on process control monitors (PCMs) such as internal base sheet resistance and area specific depletion capacitances. The variations in electrical characteristics and PCMs are briefly explained on a theoretical basis with regard to the impact on compact and statistical modeling. (C) 2003 Elsevier Ltd. All rights reserved.
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收藏
页码：1133 / 1146
页数：14
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