Modelling polycrystalline semiconductor solar cells

被引：1895

作者：

Burgelman, M ^{[1
]}

Nollet, P ^{[1
]}

Degrave, S ^{[1
]}

机构：

[1] State Univ Ghent, Elect & Informat SYst ELIS, B-9000 Ghent, Belgium

来源：

THIN SOLID FILMS | 2000年 / 361卷

关键词：

solar cells; thin film; modelling; CdTe; chalcopyrite;

D O I：

10.1016/S0040-6090(99)00825-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An overview is given of various electronic effects present in polycrystalline thin film solar cells, which do not occur in standard crystalline Si solar cells. It is explained how these effects are treated numerically in a numerical solar cell simulation tool, SCAPS, developed at the author's institute. The capabilities and limitations of SCAPS are discussed. Simulation examples of current-voltage, capacitance-voltage and capacitance-frequency characteristics are given. The agreement between the simulations and measurements is shown and discussed, both for CdTe and for Cu(In,Ga)Se-2 solar cells. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：527 / 532

页数：6

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