Modeling and simulation of AlxGayIn1-x-yAs/InP quaternary structure for photovoltaic

被引：17
作者：
Aissat, A. [1 ]
El Bey, M. [1 ]
Bestam, R. [1 ]
Vilcot, J. P. [2 ]
机构：
[1] Fac Engn Sci, LATSI Lab, Blida, Algeria
[2] Univ Sci & Technol Lille 1, UMR CNRS 8520, Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France
来源：
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2014年 / 39卷 / 27期
关键词：
Solar cell; News materials; Optoelectronics; HYDROGEN-PRODUCTION; VISIBLE-LIGHT;
D O I：
10.1016/j.ijhydene.2014.04.162
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this work, we have studied solar cells based on AlGaInAs/InP quaternary structure to describe the behavior of electronics components. To this end, we have developed a simulation program to study the gallium Ga and aluminum Al concentrations effect on respectively the lattice mismatch, the band gap energy, the absorption and the power delivered by the solar cell. This study allows us to compare between simulation and experimental results, once the cell parameters are optimized by a judicious choice of concentrations. This work allows us either to use nanotechnologies for solar cells. Copyright (C) 2014, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：15287 / 15291
页数：5
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