High-pressure Raman study of zincblende, cinnabar, and Cmcm phases of ZnTe

被引：8

作者：

Camacho, J

Loa, I

Cantarero, A

Syassen, K

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Univ Politecn Cartagena, Dept Fis Aplicada, E-30202 Murcia, Spain

[3] Univ Politecn Valencia, Inst Ciencia Mat, E-46071 Valencia, Spain

来源：

HIGH PRESSURE RESEARCH | 2002年 / 22卷 / 02期

关键词：

semiconductor; Raman scattering; high pressure; zinc telluride;

D O I：

10.1080/08957950212779

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Raman measurements of ZnTe have been performed at pressures up to 15 GPa. Frequencies, line widths, and intensities of first- and second-order Raman features of the zincblende phase (0-9.5 GPa) were studied in detail. In this note, we focus on the Raman spectra of the high-pressure cinnabar and Cnicin phases. In the transition regime from cinnabar to Cmcm (12.2 to 13.7 GPa) the Raman data indicate the possible existence of a new intermediate high-pressure phase.

引用

页码：309 / 313

页数：5

共 15 条

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