ALUMINUM CHARGE/DIPOLE PASSIVATION INDUCED BY HYDROGEN DIFFUSION IN HIGH-K METAL GATE

被引：0
|
作者：
Ribes, G. [1 ]
Barral, V. [2 ]
Chhun, S. [1 ]
Gros-Jean, M. [1 ]
Caubet, P. [1 ]
Petit, D. [1 ]
机构：
[1] STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
[2] LETI, F-38926 Crolles, France
来源：
2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年
关键词：
component; High-K; metal gate; Aluminium; hydrogen;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we have analyzed the influence of different high-k (HK), interfacial layer (IL) and metal gate on the Al effect. We show that hydrogen diffusion during the BEOL process can suppress totally the Al effect on work function. Solutions to stabilize the Al effect with respect to hydrogen diffusion are proposed and a model explaining the hydrogen and Al interaction is provided.
引用
收藏
页数：3
相关论文
共 50 条
  • [41] Characterization of thulium silicate interfacial layer for high-k/metal gate MOSFETs
    Litta, E. Dentoni
    Hellstrom, P-E
    Henkel, C.
    Ostling, M.
    2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2013, : 122 - 125
  • [42] Gentle FUSI NiSi metal gate process for high-k dielectric screening
    Gottlob, H. D. B.
    Lemme, M. C.
    Schmidt, M.
    Echtermeyer, T. J.
    Mollenhauer, T.
    Kurz, H.
    Cherkaoui, K.
    Hurley, P. K.
    Newcomb, S. B.
    MICROELECTRONIC ENGINEERING, 2008, 85 (10) : 2019 - 2021
  • [43] Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks
    Ritzenthaler, R.
    Schram, T.
    Bury, E.
    Spessot, A.
    Caillat, C.
    Srividya, V.
    Sebaai, F.
    Mitard, J.
    Ragnarsson, L. -A.
    Groeseneken, G.
    Horiguchi, N.
    Fazan, P.
    Thean, A.
    SOLID-STATE ELECTRONICS, 2013, 84 : 22 - 27
  • [44] Correlation of BTI induced device parameter degradation and variation in scaled Metal Gate/High-k CMOS technologies
    Kerber, A.
    Nigam, T.
    2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [45] Reliability Characterization of 32nm High-K Metal Gate SOT Technology with Embedded DRAM
    Mittl, Steve
    Swift, Ann
    Wu, Ernest
    Ioannou, Dimitris
    Chen, Fen
    Massey, Greg
    Rahim, Nilufa
    Hauser, Mike
    Hyde, Paul
    2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012,
  • [46] The Path Finding of Gate Dielectric Breakdown in Advanced High-k Metal-Gate CMOS Devices
    Chung, Steve
    PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 360 - 364
  • [47] Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate Device
    Park, Jeewon
    Jang, Wansu
    Shin, Changhwan
    MICROMACHINES, 2021, 12 (08)
  • [48] Characterization of high-k gate dielectric and metal gate electrode semiconductor samples with a total reflection X-ray fluorescence spectrometer
    Sparks, CM
    Beebe, MR
    Bennett, J
    Foran, B
    Gondran, C
    Hou, A
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 2004, 59 (08) : 1227 - 1234
  • [49] Characterization of High-k/Metal Gate Stack Breakdown in the Time Scale of ESD Events
    Yang, Yang
    Di Sarro, James
    Gauthier, Robert J.
    Chatty, Kiran
    Li, Junjun
    Mishra, Rahul
    Mitra, Souvick
    Ioannou, Dimitris E.
    2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2010, : 846 - 852
  • [50] 28nm FDSOI high-K metal gate CD variability investigation
    Desvoivres, L.
    Gouraud, P.
    Le Gratiet, B.
    Bouyssou, R.
    Ranica, R.
    Gallon, C.
    Thomas, I.
    ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING III, 2014, 9054
12345