ALUMINUM CHARGE/DIPOLE PASSIVATION INDUCED BY HYDROGEN DIFFUSION IN HIGH-K METAL GATE

被引：0
|
作者：
Ribes, G. [1 ]
Barral, V. [2 ]
Chhun, S. [1 ]
Gros-Jean, M. [1 ]
Caubet, P. [1 ]
Petit, D. [1 ]
机构：
[1] STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France
[2] LETI, F-38926 Crolles, France
来源：
2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2014年
关键词：
component; High-K; metal gate; Aluminium; hydrogen;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we have analyzed the influence of different high-k (HK), interfacial layer (IL) and metal gate on the Al effect. We show that hydrogen diffusion during the BEOL process can suppress totally the Al effect on work function. Solutions to stabilize the Al effect with respect to hydrogen diffusion are proposed and a model explaining the hydrogen and Al interaction is provided.
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页数：3
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