PL study of oxygen defect formation in ZnO nanorods

被引：114
作者：
Chandrinou, C. [1 ]
Boukos, N. [1 ]
Stogios, C. [1 ]
Travlos, A. [1 ]
机构：
[1] Natl Ctr Sci Res Demokritos, Inst Mat Sci, Athens 15310, Greece
来源：
MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 02期
关键词：
ZnO nanorods; Photoluminescence; Annealing; ZINC-OXIDE; THIN-FILMS; NANOWIRES; GROWTH; FABRICATION; DEPOSITION; MORPHOLOGY; SAPPHIRE;
D O I：
10.1016/j.mejo.2008.07.024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence (PL) study of needle-like ZnO nanorods grown under standard and oxygen-rich conditions is presented. The yellow-orange band at similar to 580nm increases with excess oxygen during growth. Subsequent annealing in a reducing atmosphere shows the disappearance of this band. The yellow-orange emission is attributed to oxygen interstitials (O-i). (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：296 / 298
页数：3
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