InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

被引：7

作者：

Liu, WC

Cheng, SY

Tsai, JH

Lin, PH

Chen, JY

Wang, WC

机构：

[1] Department of Electrical Engineering, National Cheng-Kung University, Tainan

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 11期

关键词：

D O I：

10.1109/55.641430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a new InGaP/GaAs superlattice emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated, A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers, Due to the large valence band discontinuity (Delta E-V) at the InGaP/GaAs heterointerface, a high current gain (beta(max) similar or equal to 220) is obtained, Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of current-voltage (I-V) characteristics at room temperature.

引用

页码：515 / 517

页数：3

共 8 条

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