EFFECT OF TIN PRECURSORS ON THE DEPOSITION OF Cu2ZnSnS4 THIN FILMS

被引：0

作者：

Nagamalleswari, D. ^{[1
,2
]}

Kishorekumar, Y. B. ^{[1
]}

Kiran, Y. B. ^{[3
]}

Sureshbabu, G. ^{[4
]}

机构：

[1] Sree Vidyanikethan Engn Coll, Solar Energy Lab, Tirupati, Andhra Pradesh, India

[2] Jawaharlal Nehru Technol Univ Ananthapur, Dept Phys, Anantapuramu, India

[3] Sree Vidyanikethan Engn Coll, Ctr Appl Sci, Tirupati, Andhra Pradesh, India

[4] Govt Degree Coll, Dept Phys, Pakala, India

来源：

CHALCOGENIDE LETTERS | 2020年 / 17卷 / 10期

关键词：

Cu2ZnSnS4; Thin films; Absorber layer; Chemical spray technique; Structural properties; Solar cell; SOLAR-CELL; GROWTH; LAYER; TEMPERATURE; PHASES;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu2ZnSnS4 is a potential compound semiconducting material for solar absorber layer in thin film heterojunction solar cells. Chemical spray pyrolysis technique has been successfully employed to deposit these thin films using two different tin precursors. Thin films were characterized by studying their structural, composition, electrical and optical properties. X-ray diffraction pattern reveals that these films exhibit polycrystalline nature with kesterite structure. Lattice parameters of Cu2ZnSnS4 films are found to be a = b = 0.544 nm and c = 1.084 nm. Optical band gap, evaluated from spectral transmittance data, is close to ideal energy gap (1.5 eV) exhibit highest conversion efficiency. Optical absorption coefficient of these films is = 10 4 cm(-1). These films exhibit p-type nature. A humble attempt is made to fabricate a typical heterojunction Cu2ZnSnS4 thin film solar cell.

引用

页码：505 / 513

页数：9

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