Nano-porosity in GaSb induced by swift heavy ion irradiation

被引:27
作者
Kluth, P. [1 ]
Sullivan, J. [2 ]
Li, W. [3 ]
Weed, R. [2 ]
Schnohr, C. S. [1 ]
Giulian, R. [1 ]
Araujo, L. L. [1 ]
Lei, W. [1 ]
Rodriguez, M. D. [1 ]
Afra, B. [1 ]
Bierschenk, T. [1 ]
Ewing, R. C. [3 ]
Ridgway, M. C. [1 ]
机构
[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia
[2] Australian Natl Univ, ARC Ctr Antimatter Matter Studies, Res Sch Phys & Engn, AMPL, Canberra, ACT 0200, Australia
[3] Univ Michigan, Dept Earth & Environm Sci, Ann Arbor, MI 48109 USA
基金
澳大利亚研究理事会;
关键词
SEMICONDUCTORS; NANOFIBERS; GERMANIUM; SI;
D O I
10.1063/1.4861747
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nano-porous structures form in GaSb after ion irradiation with 185 MeV Au ions. The porous layer formation is governed by the dominant electronic energy loss at this energy regime. The porous layer morphology differs significantly from that previously reported for low-energy, ion-irradiated GaSb. Prior to the onset of porosity, positron annihilation lifetime spectroscopy indicates the formation of small vacancy clusters in single ion impacts, while transmission electron microscopy reveals fragmentation of the GaSb into nanocrystallites embedded in an amorphous matrix. Following this fragmentation process, macroscopic porosity forms, presumably within the amorphous phase. (C) 2014 AIP Publishing LLC.
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页数:4
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