Memory CD8+ T cells exhibit increased antigen threshold requirements for recall proliferation

被引:71
作者
Mehlhop-Williams, Erin R. [1 ]
Bevan, Michael J. [1 ,2 ]
机构
[1] Univ Washington, Dept Immunol, Seattle, WA 98109 USA
[2] Univ Washington, Howard Hughes Med Inst, Seattle, WA 98109 USA
关键词
DENDRITIC CELLS; PROTECTIVE IMMUNITY; ENHANCED EXPRESSION; CYTOKINE PRODUCTION; SIGNALING PATHWAYS; NAIVE; ACTIVATION; RESPONSES; STIMULATION; SENSITIVITY;
D O I
10.1084/jem.20131271
中图分类号
R392 [医学免疫学]; Q939.91 [免疫学];
学科分类号
100102 ;
摘要
A hallmark of immunological memory is the ability of previously primed T cells to undergo rapid recall responses upon antigen reencounter. Classic work has suggested that memory T cells proliferate in response to lower doses of antigen than naive T cells and with reduced requirements for co-stimulation. In contrast to this premise, we observed that naive but not memory T cells proliferate in vivo in response to limited antigen presentation. To reconcile these observations, we tested the antigen threshold requirement for cell cycle entry in naive and central memory CD8(+) T cells. Although both naive and memory T cells detect low dose antigen, only naive T cells activate cell cycle effectors. Direct comparison of TCR signaling on a single cell basis indicated that central memory T cells do not activate Zap70, induce cMyc expression, or degrade p27 in response to antigen levels that activate these functions in naive T cells. The reduced sensitivity of memory T cells may result from both decreased surface TCR expression and increased expression of protein tyrosine phosphatases as compared with naive T cells. Our data describe a novel aspect of memory T cell antigen threshold sensitivity that may critically regulate recall expansion.
引用
收藏
页码:345 / 356
页数:12
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