TiN deposition and morphology control by scalable plasma-assisted surface treatments

被引:6
作者
Baranov, Oleg [1 ]
Fang, Jinghua [2 ]
Ostrikov, Kostya [3 ,4 ]
Cvelbar, Uros [5 ]
机构
[1] Natl Aerosp Univ KhAI, Plasma Lab, UA-61070 Kharkov, Ukraine
[2] Univ Technol, Fac Sci, Sch Math & Phys Sci, Sydney, NSW 2000, Australia
[3] Queensland Univ Technol, Sch Chem Phys & Mech Engn, Inst Future Environm, Brisbane, Qld 4000, Australia
[4] CSIRO, CSIRO QUT Joint Sustainable Mat & Devices Lab, POB 218, Lindfield, NSW 2070, Australia
[5] Jozef Stefan Inst, Jamova Cesta 39, SI-1000 Ljubljana, Slovenia
基金
澳大利亚研究理事会;
关键词
Thin films; Physical vapour deposition (PVD); Sputtering; Arc discharges; CATHODIC VACUUM-ARC; NEUTRAL FLUX RATIOS; ION CURRENT-DENSITY; THIN-FILMS; OPTICAL-PROPERTIES; MAGNETRON DISCHARGE; ALUMINUM-OXIDE; SUBSTRATE BIAS; COATINGS; TITANIUM;
D O I
10.1016/j.matchemphys.2016.12.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A method to modify the mechanical properties and morphology of thin TiN films by controlling the ion fluxes via purposefully shaped magnetic field is developed to enhance the effectiveness of plasma enhanced deposition of TiN on a large (up to 400 mm in diameter) substrate. For this purpose, the two main schemes of the plasma control are examined. When the substrate is a part of the plasma generating circuit, TiN is deposited in the magnetron-like arc configuration of the magnetic field. This configuration is used to control ion fluxes for cleaning, etching, and heating of the substrate, and eventually, to control the mechanical properties and morphology of the deposits. When exposing the substrate to the plasma of an external plasma source, the magnetic traps of the bottle configuration with mirrors near the plasma source and substrate surface are created. It is shown that the ion fluxes from the external plasma source can be controlled by the location and powering of the control magnetic coils, which direct nitrogen and Ti ions to the surface. The proposed method is generic and could be used for controlling various nitride materials including but not limited to BN, NbN, W2N and TaN. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:143 / 153
页数:11
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