Ba-hexaferrite films for next generation microwave devices (invited)

被引:155
作者
Harris, VG [1 ]
Chen, ZH
Chen, YJ
Yoon, S
Sakai, T
Gieler, A
Yang, A
He, YX
Ziemer, KS
Sun, NX
Vittoria, C
机构
[1] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
[2] Northeastern Univ, Ctr Microwave Magnet Mat & Integrated Circuits, Boston, MA 02115 USA
[3] Northeastern Univ, Dept Chem Engn, Boston, MA 02115 USA
关键词
D O I
10.1063/1.2165145
中图分类号
O59 [应用物理学];
学科分类号
摘要
Next generation magnetic microwave devices require ferrite films to be thick (>300 mu m), self-biased (high remanent magnetization), and low loss in the microwave and millimeter wave bands. Here we examine recent advances in the processing of thick Ba-hexaferrite (M-type) films using pulsed laser deposition (PLD), liquid-phase epitaxy, and screen printing. These techniques are compared and contrasted as to their suitability for microwave materials processing and industrial production. Recent advances include the PLD growth of BaM on wide-band-gap semiconductor substrates and the development of thick, self-biased, low-loss BaM films by screen printing. (C) 2006 American Institute of Physics.
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页数:5
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