Current understanding and modeling of boron-interstitial clusters

被引:0
作者
Pichler, P [1 ]
机构
[1] Fraunhofer Inst Integrierte Bauelemente, Bauelementetechnol, D-91058 Erlangen, Germany
来源
SILICON FRONT-END JUNCTION FORMATION TECHNOLOGIES | 2002年 / 717卷
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中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Scaling of devices requires not only shallow junctions but also high levels of dopant activation. For boron as the main p-type dopant, the latter requirement is especially problematic since small clusters of boron atoms and self-interstitials, known also as boron-interstitial clusters (BICs), were found to deactivate and immobilize large fractions of the implanted atoms during post-implantation annealing. In this article, the properties of BICs are reviewed and their influence on semiconductor processes are highlighted.
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页码:103 / 114
页数:12
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