Energy-level alignment and charge injection at metal/C60/organic interfaces

被引：18
|
作者：
Wang, Z. B. [1 ]
Helander, M. G. [1 ]
Greiner, M. T. [1 ]
Qiu, J. [1 ]
Lu, Z. H. [1 ]
机构：
[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 04期
基金：
加拿大自然科学与工程研究理事会;
关键词：
adsorption; elemental semiconductors; Fermi level; fullerenes; gold; interface states; organic semiconductors; Schottky barriers; semiconductor heterojunctions; semiconductor thin films; ultraviolet photoelectron spectra; LIGHT-EMITTING-DIODES; C-60; METAL; CELLS;
D O I：
10.1063/1.3189176
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The energy-level alignment and charge injection at metal/C-60/organic interfaces have been studied by ultraviolet photoelectron spectroscopy and temperature dependent current-voltage (IV) measurements. It is found that the Fermi level at the interface is pinned to similar to 4.7 eV by adsorbed C-60 molecules on the metal surface, resulting in more favorable energy level alignment for charge injection. The findings are in excellent agreement with interface dipole theory derived from traditional semiconductor physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Growth and characterization of C60/GaAs interfaces and C60 doped GaAs
    Nishinaga, Jiro
    Horikoshi, Yoshiji
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 135 - 139
  • [32] Effects of Energy-Level Alignment on Characteristics of Inverted Organic Light-Emitting Diodes
    Kawamura, Shizuka
    Suzuki, Kazuma
    Sasaki, Tsubasa
    Oono, Taku
    Shimizu, Takahisa
    Fukagawa, Hirohiko
    ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (24) : 21749 - 21755
  • [33] Dipoles and band alignment for benzene/Au(111) and C60/Au(111) interfaces
    Abad, E.
    Ortega, J.
    Dappe, Y. J.
    Flores, F.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (01): : 119 - 124
  • [34] Modelling energy level alignment at organic interfaces and density functional theory
    Flores, F.
    Ortega, J.
    Vazquez, H.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2009, 11 (39) : 8658 - 8675
  • [35] The role of gap states in the energy level alignment at the organic-organic heterojunction interfaces
    Zhong, Shu
    Zhong, Jian Qiang
    Mao, Hong Ying
    Zhang, Jia Lin
    Lin, Jia Dan
    Chen, Wei
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2012, 14 (41) : 14127 - 14141
  • [36] Thickness-Dependent Energy-Level Alignment at the Organic-Organic Interface Induced by Templated Gap States
    Hagenlocher, Jan
    Broch, Katharina
    Zwadlo, Matthias
    Lepple, Daniel
    Rawle, Jonathan
    Carla, Francesco
    Kera, Satoshi
    Schreiber, Frank
    Hinderhofer, Alexander
    ADVANCED MATERIALS INTERFACES, 2022, 9 (03)
  • [37] Electronic and optical properties of C60 under the influence of alkali metal injection: A DFT study
    Najim, Abdelhafid
    Bakour, Anass
    Bajjou, Omar
    Chrafih, Younes
    Rahmani, Khalid
    STRUCTURAL CHEMISTRY, 2024,
  • [38] Energy level alignment and morphology of interfaces between molecular and polymeric organic semiconductors
    Zhang, Ft
    Vollmer, A.
    Zhang, J.
    Xu, Z.
    Rabe, J. P.
    Koch, N.
    ORGANIC ELECTRONICS, 2007, 8 (05) : 606 - 614
  • [39] Substrate-Independent Energy-Level Pinning of an Organic Semiconductor Providing Versatile Hole-Injection Electrodes
    Zhai, Tianshu
    Wang, Rongbin
    Katase, Takayoshi
    Quigley, Frances
    Ohta, Hiromichi
    Amsalem, Patrick
    Koch, Norbert
    Duhm, Steffen
    ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (12) : 3994 - 4001
  • [40] Energy-level alignment of a single molecule on ultrathin insulating film
    Imai-Imada, Miyabi
    Imada, Hiroshi
    Miwa, Kuniyuki
    Jung, Jaehoon
    Shimizu, Tomoko K.
    Kawai, Maki
    Kim, Yousoo
    PHYSICAL REVIEW B, 2018, 98 (20)
12345