Nondestructive Visualization of Interfacial Conducting Inhomogeneities in Memristive Oxides by Electroluminescence

被引：5

作者：

Lin, Weijian ^{[1
]}

Li, Dong ^{[1
]}

Su, Yangtao ^{[1
,2
]}

Shi, Haibin ^{[1
,2
]}

Wang, Li ^{[1
,2
]}

Cao, Xinyu ^{[1
,2
]}

Meng, Yang ^{[1
,2
]}

Zhao, Hongwu ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China

[3] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China

来源：

ADVANCED MATERIALS INTERFACES | 2021年 / 8卷 / 01期

基金：

中国国家自然科学基金;

关键词：

defect states; electroluminescence; memristive oxides; nonequilibrium states; oxygen vacancies; resistive switching; SWITCHING MECHANISM; DOPED SRTIO3; RESISTANCE; DEFECTS; DEVICES;

D O I：

10.1002/admi.202001617

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The formation of conducting paths consisting of oxygen vacancies plays a crucial role in the resistive switching (RS) phenomenon in oxides. However, it is extremely challenging to probe the dynamic distribution of oxygen vacancies under changing electric field without breaking the device. In this work, the temporal-spatial variation of oxygen vacancies in memristive Nb-SrTiO3 devices has been investigated nondestructively by defect states mediated electroluminescence (EL). The disparate spatial inhomogeneities of conducting paths penetrating the Au/Nb-SrTiO3 interfaces are clearly demonstrated on the device scale, which is completely subject to the forming bias polarity. Moreover, the EL spectroscopy results confirm the existence of temporary nonequilibrium states in conducting paths. The causal relationship between the EL emission and oxygen vacancies concentration paves a pathway to explore RS dynamics in oxides, and further to design novel electro-optical devices.

引用

页数：8

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