共 46 条
Lateral Buckling Mechanics in Silicon Nanowires on Elastomeric Substrates
被引:110
作者:
Ryu, Seung Yoon
[1
]
Xiao, Jianliang
[2
,3
]
Park, Won Il
[1
]
Son, Kwang Soo
[1
]
Huang, Yonggang Y.
[2
,3
]
Paik, Ungyu
[1
]
Rogers, John A.
[4
]
机构:
[1] Hanyang Univ, Div Mat Sci Engn, 17 Haengdang Dong, Seoul 133791, South Korea
[2] Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA
[4] Univ Illinois, Frederick Seitz Mat Res Lab, Beckman Inst, Dept Phys,Dept Mech Sci & Engn,Dept Mat Sci & Eng, Urbana, IL 61801 USA
来源:
关键词:
SINGLE-CRYSTAL SILICON;
HIGH-PERFORMANCE ELECTRONICS;
SEMICONDUCTOR NANORIBBONS;
ELASTIC PROPERTIES;
THIN-FILMS;
ADHESION;
RIBBONS;
MODULI;
D O I:
10.1021/nl901450q
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
We describe experimental and theoretical studies of the buckling mechanics in silicon nanowires (SiNWs) on elastomeric substrates. The system involves randomly oriented SiNWs grown using established procedures on silicon wafers, and then transferred and organized into aligned arrays on prestrained slabs of poly(dimethylsiloxane) (POMS). Releasing the prestrain leads to nonlinear mechanical buckling processes that transform the initially linear SINWs into sinusoldal (i.e., "wavy") shapes. The displacements associated with these waves lie in the plane of the substrate, unlike previously observed behavior in analogous systems of silicon nanoribbons and carbon nanotubes where motion occurs out-of-plane. Theoretical analysis indicates that the energy associated with this in-plane buckling is slightly lower than the out-of-plane case for the geometries and mechanical properties that characterize the SiNWs. An accurate measurement of the Young's modulus of individual SiNWs, between similar to 170 and similar to 110 GPa for the range of wires examined here, emerges from comparison of theoretical analysis to experimental observations. A simple strain gauge built using SiNWs in these wavy geometries demonstrates one area of potential application.
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页码:3214 / 3219
页数:6
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