Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser molecular beam epitaxy

被引：16

作者：

Matsubara, K ^{[1
]}

Niki, S ^{[1
]}

Watanabe, M ^{[1
]}

Fons, P ^{[1
]}

Iwata, K ^{[1
]}

Yamada, A ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / Suppl 1期

关键词：

D O I：

10.1007/s003390051504

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

LiNbO3 films were epitaxially grown on c-sapphire substrates using oxygen radical-assisted laser molecular beam epitaxy (MBE). X-ray diffraction-based structural analysis showed that the films were epitaxial. Triple-axis rocking curve measurements of the LiNbO3 (0006) reflection revealed that the film was highly c-oriented with an extremely narrow mosaic; the full width at half maximum of the LiNbO3 (0 0 0 6) rocking curve was 0.0036 degrees, comparable to the value of high-quality bulk crystals. The surface of the film was very smooth, with a surface roughness r.m.s. value, measured by atomic force microscope, of 0.4 nm for a film of thickness 15 nm. The chemical composition of the film measured by X-ray photoelectron spectroscopy (XPS) was stoichiometric within the accuracy of XPS measurement.

引用

页码：S679 / S681

页数：3

共 13 条

[1] STRUCTURAL-PROPERTIES OF LINBO3 THIN-FILMS GROWN BY THE PULSED-LASER DEPOSITION TECHNIQUE [J].