Sulfidization of GaAs in alcoholic solutions: A method having an impact on efficiency and stability of passivation

被引：34

作者：

Bessolov, VN ^{[1
]}

Konenkova, EV ^{[1
]}

Lebedev, MV ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

alcohols; oxide layer; photoluminescence; sulfur passivation;

D O I：

10.1016/S0921-5107(96)01816-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence and XPS were used to show that the effectiveness of GaAs sulfur passivation could be increased by using sulfide solutions in which alcohols with a low dielectric constant are used as solvents. It has been found that with. the decrease in the solvent dielectric constant, in such solutions the surface sulfur coverage increases, the thickness of the native oxide layer decreases, and the efficiency of band-edge photoluminescence increases. (C) 1997 Elsevier Science S.A.

引用

页码：376 / 379

页数：4

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