Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (111)A and (100)A substrates with a metamorphic buffer

被引：8
|
作者：
Kuznetsov, K. A. [1 ]
Galiev, G. B. [2 ]
Kitaeva, G. Kh [1 ]
Kornienko, V. V. [1 ]
Klimov, E. [2 ]
Klochkov, A. N. [2 ]
Leontyev, A. A. [1 ]
Pushkarev, S. S. [2 ]
Maltsev, P. P. [2 ]
机构：
[1] Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
[2] RAS, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia
来源：
LASER PHYSICS LETTERS | 2018年 / 15卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
terahertz wave generation; photoconductive antenna; GaAs (111)A; time-domain spectroscopy; molecular beam epitaxy; InGaAs; MOLECULAR-BEAM EPITAXY; TEMPERATURE-GROWN GAAS; TERAHERTZ-RADIATION GENERATION; QUANTUM-WELLS; MU-M; DYNAMICS; INGAAS; INP; SPECTROSCOPY; WAVELENGTHS;
D O I：
10.1088/1612-202X/aac7bb
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The terahertz (THz) wave generation by the spiral photoconductive antennas fabricated on the low-temperature and high-temperature grown undoped and Si-doped In0.5Ga0.5As films is studied by the terahertz time-domain spectroscopy method. The In0.5Ga0.5As layers were grown by molecular beam epitaxy on GaAs substrates with (100) and (111) A crystallographic orientations utilizing step-graded InxGa1-xAs metamorphic buffer. The antennas are excited by radiation of Er3+-fiber laser at 1.56 mu m wavelength in two regimes: with pulse durations of 2.5 ps or 100 fs. It is found that the THz wave generation is 3-4 times more effective in the case of InGaAs-based antennas on (111)A GaAs substrates as compared to the (100) substrates. Power-voltage characteristic of the LT-InGaAs antenna up to and beyond threshold breakdown voltage are reported.
引用
收藏
页数：7
相关论文
共 50 条
  • [31] Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates
    Yoon, IT
    Han, SY
    Park, HL
    Kim, TW
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2001, 62 (03) : 607 - 611
  • [32] Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
    Hong-Quan Nguyen
    Chang, Edward Yi
    Yu, Hung-Wei
    Hai-Dang Trinh
    Dee, Chang-Fu
    Wong, Yuen-Yee
    Hsu, Ching-Hsiang
    Binh-Tinh Tran
    Chung, Chen-Chen
    APPLIED PHYSICS EXPRESS, 2012, 5 (05)
  • [33] IN0.5GA0.5AS/INALAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS ON GAAS SUBSTRATES GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
    MASATO, H
    MATSUNO, T
    INOUE, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3850 - 3852
  • [34] Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations
    Tang, Shih-Hsuan
    Kuo, Chien-I
    Trinh, Hai-Dang
    Chang, Edward Yi
    Nguyen, Hong-Quan
    Nguyen, Chi-Lang
    Luo, Guang-Li
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (02):
  • [35] STUDY OF THE STRUCTURE OF INDIVIDUAL LATTICES IN MULTICOMPONENT EPITAXIAL IN0.5GA0.5P/GAAS FILMS BY THE STATIONARY X-RAY WAVE METHOD
    KAZIMIROV, AY
    KOVALCHUK, MV
    KON, VG
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1988, 14 (15): : 1345 - 1348
  • [36] MOCVD growth and characterization of 100mm diameter (Ga1-xAlx)0.5In0.5P/GaAs epitaxial materials for LED applications
    Feng, ZC
    Ferguson, I
    Armour, E
    Chadha, A
    Masaun, N
    Stall, RA
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS II, 1998, 3279 : 161 - 171
  • [37] Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
    G. B. Galiev
    S. S. Pushkarev
    A. M. Buriakov
    V. R. Bilyk
    E. D. Mishina
    E. A. Klimov
    I. S. Vasil’evskii
    P. P. Maltsev
    Semiconductors, 2017, 51 : 503 - 508
  • [38] Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
    Galiev, G. B.
    Pushkarev, S. S.
    Buriakov, A. M.
    Bilyk, V. R.
    Mishina, E. D.
    Klimov, E. A.
    Vasil'evskii, I. S.
    Maltsev, P. P.
    SEMICONDUCTORS, 2017, 51 (04) : 503 - 508
  • [39] Temperature coefficient of the space-charge scattering mobility dependent on the Ge doping concentration in In0.5Ga0.5P epilayers grown on GaAs (100) substrates
    Kim, TW
    Han, SY
    Park, HL
    SOLID STATE COMMUNICATIONS, 2000, 116 (03) : 163 - 166
  • [40] Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures
    G. B. Galiev
    E. A. Klimov
    A. N. Klochkov
    S. S. Pushkarev
    P. P. Maltsev
    Semiconductors, 2018, 52 : 376 - 382
12345