Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (111)A and (100)A substrates with a metamorphic buffer

被引：8
|
作者：
Kuznetsov, K. A. [1 ]
Galiev, G. B. [2 ]
Kitaeva, G. Kh [1 ]
Kornienko, V. V. [1 ]
Klimov, E. [2 ]
Klochkov, A. N. [2 ]
Leontyev, A. A. [1 ]
Pushkarev, S. S. [2 ]
Maltsev, P. P. [2 ]
机构：
[1] Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
[2] RAS, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia
来源：
LASER PHYSICS LETTERS | 2018年 / 15卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
terahertz wave generation; photoconductive antenna; GaAs (111)A; time-domain spectroscopy; molecular beam epitaxy; InGaAs; MOLECULAR-BEAM EPITAXY; TEMPERATURE-GROWN GAAS; TERAHERTZ-RADIATION GENERATION; QUANTUM-WELLS; MU-M; DYNAMICS; INGAAS; INP; SPECTROSCOPY; WAVELENGTHS;
D O I：
10.1088/1612-202X/aac7bb
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The terahertz (THz) wave generation by the spiral photoconductive antennas fabricated on the low-temperature and high-temperature grown undoped and Si-doped In0.5Ga0.5As films is studied by the terahertz time-domain spectroscopy method. The In0.5Ga0.5As layers were grown by molecular beam epitaxy on GaAs substrates with (100) and (111) A crystallographic orientations utilizing step-graded InxGa1-xAs metamorphic buffer. The antennas are excited by radiation of Er3+-fiber laser at 1.56 mu m wavelength in two regimes: with pulse durations of 2.5 ps or 100 fs. It is found that the THz wave generation is 3-4 times more effective in the case of InGaAs-based antennas on (111)A GaAs substrates as compared to the (100) substrates. Power-voltage characteristic of the LT-InGaAs antenna up to and beyond threshold breakdown voltage are reported.
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收藏
页数：7
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