Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (111)A and (100)A substrates with a metamorphic buffer

被引：8

作者：

Kuznetsov, K. A. ^{[1
]}

Galiev, G. B. ^{[2
]}

Kitaeva, G. Kh ^{[1
]}

Kornienko, V. V. ^{[1
]}

Klimov, E. ^{[2
]}

Klochkov, A. N. ^{[2
]}

Leontyev, A. A. ^{[1
]}

Pushkarev, S. S. ^{[2
]}

Maltsev, P. P. ^{[2
]}

机构：

[1] Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia

[2] RAS, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia

来源：

LASER PHYSICS LETTERS | 2018年 / 15卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

terahertz wave generation; photoconductive antenna; GaAs (111)A; time-domain spectroscopy; molecular beam epitaxy; InGaAs; MOLECULAR-BEAM EPITAXY; TEMPERATURE-GROWN GAAS; TERAHERTZ-RADIATION GENERATION; QUANTUM-WELLS; MU-M; DYNAMICS; INGAAS; INP; SPECTROSCOPY; WAVELENGTHS;

D O I：

10.1088/1612-202X/aac7bb

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The terahertz (THz) wave generation by the spiral photoconductive antennas fabricated on the low-temperature and high-temperature grown undoped and Si-doped In0.5Ga0.5As films is studied by the terahertz time-domain spectroscopy method. The In0.5Ga0.5As layers were grown by molecular beam epitaxy on GaAs substrates with (100) and (111) A crystallographic orientations utilizing step-graded InxGa1-xAs metamorphic buffer. The antennas are excited by radiation of Er3+-fiber laser at 1.56 mu m wavelength in two regimes: with pulse durations of 2.5 ps or 100 fs. It is found that the THz wave generation is 3-4 times more effective in the case of InGaAs-based antennas on (111)A GaAs substrates as compared to the (100) substrates. Power-voltage characteristic of the LT-InGaAs antenna up to and beyond threshold breakdown voltage are reported.

引用

页数：7

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