Permittivity of a ferroelectric film beneath a metal electrode

被引：6

作者：

Bayer, Christian ^{[1
]}

Jackson, Timothy J. ^{[1
]}

机构：

[1] Univ Birmingham, Sch Engn, Birmingham B15 2TT, W Midlands, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 02期

关键词：

DIELECTRIC RESPONSE; STRONTIUM-TITANATE;

D O I：

10.1063/1.2221524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The permittivity of a ferroelectric n-type semiconductor varies smoothly with depth beneath a reversed biased Schottky contact. In partially depleted films, the depletion layer controls the capacitance. In fully depleted films the inverse capacitance is proportional to the thickness, which suggests that Schottky effects do not cause dead-layer behavior. (c) 2006 American Institute of Physics.

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页数：3

相关论文

共 14 条

[1] Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors [J].

Black, CT ;

Welser, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (04) :776-780

[2] Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructures [J].

Bratkovsky, AM ;

Levanyuk, AP .

PHYSICAL REVIEW LETTERS, 2005, 94 (10)

[3] Profiling of electrical doping concentration in ferroelectrics [J].

Chai, FK ;

Brews, JR ;

Schrimpf, RD ;

Birnie, DP .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2517-2527

[4] Interface-related thickness dependence of the tunability in BaSrTiO3 thin films [J].

Ellerkmann, U ;

Liedtke, R ;

Boettger, U ;

Waser, R .

APPLIED PHYSICS LETTERS, 2004, 85 (20) :4708-4710

[5] Direct observation of a fully strained dead layer at Ba0.7Sr0.3TiO3/SrRuO3 interface -: art. no. 062901 [J].

He, JQ ;

Vasco, E ;

Jia, CL ;

Wang, RH .

APPLIED PHYSICS LETTERS, 2005, 87 (06)

[6] Calculation of band bending in ferroelectric semiconductor [J].

Matsuura, H .

NEW JOURNAL OF PHYSICS, 2000, 2 :81-811

[7]

Moos R, 1997, J AM CERAM SOC, V80, P2549, DOI 10.1111/j.1151-2916.1997.tb03157.x

[8] Impact of the top-electrode material on the permittivity of single-crystalline Ba0.7Sr0.3TiO3 thin films -: art. no. 202908 [J].

Plonka, R ;

Dittmann, R ;

Pertsev, NA ;

Vasco, E ;

Waser, R .

APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3

[9] Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate [J].

Robertson, J ;

Chen, CW .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1168-1170

[10] Intrinsic dielectric response in ferroelectric nano-capacitors [J].

Saad, MM ;

Baxter, P ;

Bowman, RM ;

Gregg, JM ;

Morrison, FD ;

Scott, JF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (41) :L451-L456