Oxygen-deficiency-activated charge ordering in La2/3Sr1/3MnO3-δ thin films

被引：47

作者：

Li, J ^{[1
]}

Ong, CK

Liu, JM

Huang, Q

Wang, SJ

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore

[2] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.125935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxygen-deficiency-activated charge ordering (CO) transition has been observed in C-oriented La2/3Sr1/3MnO3-delta thin films prepared by pulsed laser deposition on LaAlO3 substrates. A rapid growth of the sample resistivity at temperatures below T-C is observed, while significant thermal hysteresis and electrical field induced transition from the insulator CO state to metallic-like state are recorded. Such a CO state can also be partially melted under a magnetic field of 0.4 T, resulting in enhanced magnetoresistance at low temperatures. Magnetic properties of the films can be well understood as the coexistence of the ferromagnetic state and the CO state. The CO state in oxygen deficient thin films is explained in terms of the Mn-O octahedral distortion or the narrowness of the conduction bandwidth of the e(g) carriers. (C) 2000 American Institute of Physics. [S0003-6951(00)04008-0].

引用

页码：1051 / 1053

页数：3

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