An accurate and simplified small signal parameter extraction method for GaN HEMT

被引:21
|
作者
Khusro, Ahmad [1 ]
Hashmi, Mohammad S. [2 ,3 ]
Ansari, Abdul Quaiyum [1 ]
Mishra, Aditya [1 ]
Tarique, Mohammad [3 ,4 ]
机构
[1] JMI, Dept Elect Engn, New Delhi, India
[2] Nazarbayev Univ, Sch Engn, Astana, Kazakhstan
[3] IIIT, CDRL, New Delhi, India
[4] Motorola Solut Inc, George Town, Malaysia
关键词
2DEG; AlGaN; GaN HEMT; cold pinch-off; de-embedding; parameter extraction; RF;
D O I
10.1002/cta.2622
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, development of a small signal model for 2 x 200 mu m GaN HEMT based on the conventional 20-element model is presented. The proposed model presents a direct parameter extraction algorithm, instead of the hybrid optimization approach, that provides simplification, accuracy, and less computational complexity. The extrinsic elements are extracted using a modified cold pinch-off condition while discarding the unwanted forward biasing of the gate. The negative drain to source capacitance C-ds is also observed in the ohmic region (for smaller V-DS). An excellent agreement found between the measured and modeled data for a wide range of frequencies and bias values shows the effectiveness of the proposed approach. The proposed modeling technique is validated with a good agreement between the achieved bias dependency of intrinsic parameter values and the respective theoretical parameter values.
引用
收藏
页码:941 / 953
页数:13
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