Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering

被引：23
作者：
Hanke, M.
Schmidbauer, M.
Grigoriev, D.
Schaefer, P.
Koehler, R.
Metzger, T. H.
Wang, Zh. M.
Mazur, Yu. I.
Salamo, G. J.
机构：
[1] Univ Halle Wittenberg, Fachbereich Phys, D-06120 Halle, Germany
[2] Inst Kristallzuchtung, D-12489 Berlin, Germany
[3] Humboldt Univ, D-12489 Berlin, Germany
[4] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[5] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 05期
关键词：
D O I：
10.1063/1.2240114
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report on x-ray diffuse scattering at nominally strain-free GaAs(001) quantum dot molecules (QDMs). Al0.3Ga0.7As deposited by molecular beam epitaxy on GaAs(001) acts as barrier layer between the GaAs(001) substrate and subsequently grown QDMs; the adjusted thickness of 50 nm preserves the in-plane lattice parameter. Pairs of lenselike quantum dots are created with preferential orientation along [1 (1) over bar0] placed on shallow hills. Grazing incidence diffraction along with kinematical scattering simulations indicate completely strain-free QDs which prove a strongly suppressed intermixing between QDMs and the underlying AlGaAs barrier layer.
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页数：3
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