Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering

被引：23

作者：

Hanke, M.

Schmidbauer, M.

Grigoriev, D.

Schaefer, P.

Koehler, R.

Metzger, T. H.

Wang, Zh. M.

Mazur, Yu. I.

Salamo, G. J.

机构：

[1] Univ Halle Wittenberg, Fachbereich Phys, D-06120 Halle, Germany

[2] Inst Kristallzuchtung, D-12489 Berlin, Germany

[3] Humboldt Univ, D-12489 Berlin, Germany

[4] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[5] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 05期

关键词：

D O I：

10.1063/1.2240114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on x-ray diffuse scattering at nominally strain-free GaAs(001) quantum dot molecules (QDMs). Al0.3Ga0.7As deposited by molecular beam epitaxy on GaAs(001) acts as barrier layer between the GaAs(001) substrate and subsequently grown QDMs; the adjusted thickness of 50 nm preserves the in-plane lattice parameter. Pairs of lenselike quantum dots are created with preferential orientation along [1 (1) over bar0] placed on shallow hills. Grazing incidence diffraction along with kinematical scattering simulations indicate completely strain-free QDs which prove a strongly suppressed intermixing between QDMs and the underlying AlGaAs barrier layer.

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页数：3

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