Improved Sensitivity with Low Limit of Detection of a Hydrogen Gas Sensor Based on rGO-Loaded Ni-Doped ZnO Nanostructures

被引:151
作者
Bhati, Vijendra Singh [1 ]
Ranwa, Sapana [2 ,3 ]
Rajamani, Saravanan [2 ]
Kumari, Kusum [4 ]
Raliya, Ramesh [5 ]
Biswas, Pratim [5 ]
Kumar, Mahesh [2 ]
机构
[1] Indian Inst Technol Jodhpur, Dept Phys, Jodhpur 342011, Rajasthan, India
[2] Indian Inst Technol Jodhpur, Dept Elect Engn, Jodhpur 342011, Rajasthan, India
[3] Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
[4] Natl Inst Technol, Dept Phys, Warangal 506004, Telangana, India
[5] Washington Univ St Louis, Aerosol & Air Qual Res Lab, Dept Energy Environm & Chem Engn, St Louis, MO 63130 USA
关键词
rGO-loaded Ni-doped ZnO nanostructures; RF sputtering; hydrogen; p-n heterojunction; selectivity; REDUCED GRAPHENE OXIDE; SENSING PROPERTIES; ROOM-TEMPERATURE; THIN-FILMS; NANORODS; PERFORMANCE; NANOCOMPOSITES; ETHANOL; CO;
D O I
10.1021/acsami.7b17877
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report enhanced hydrogen-gas-sensing performance of a Ni-doped ZnO sensor decorated with the optimum concentration of reduced graphene oxide (rGO). Ni-doped ZnO nanoplates were grown by radio frequency sputtering, rGO was synthesized by Hummer's method and decorated by the drop cast method of various concentration of rGO (0-1.5 wt %). The current-voltage characteristics of the rGO-loaded sensor are highly influenced by the loading concentration of rGO, where current conduction decreases and sensor resistance increases as the rGO concentration is increased up to 0.75 wt % because of the formation of various Schottky heterojunctions at rGO/ZnO interfaces. With the combined effect of more active site availability and formation of various p-n heterojunctions due to the optimum loading concentration of rGO (0.75 wt %), the sensor shows the maximum sensing response of similar to 63.8% for 100 ppm hydrogen at moderate operating temperature (150 degrees C). The rGO-loaded sensors were able to detect a minimum of 1 ppm hydrogen concentration and showed high selectivity. However, a further increase in the rGO concentration (1.5 wt %) leads to the reduction of the relative response of hydrogen gas, ascribed to the formation of interconnections of rGO between electrodes. Therefore, it reduces the total resistance of the sensor and minimizes the effect of p-n heterojunction on sensor response.
引用
收藏
页码:11116 / 11124
页数:9
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