Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire

被引：21

作者：

Huang, R. ^{[1
]}

Sun, K. ^{[1
]}

Kiang, K. S. ^{[1
]}

Chen, R. ^{[1
]}

Wang, Y. ^{[1
]}

Gholipour, B. ^{[2
]}

Hewak, D. W. ^{[2
]}

De Groot, C. H. ^{[1
]}

机构：

[1] Univ Southampton, Nano Res Grp, Southampton SO9 5NH, Hants, England

[2] Univ Southampton, Optoelect Res Ctr, Southampton SO9 5NH, Hants, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

contact resistance; phase change; nanowire; spacer etch; MEMORY; FILMS;

D O I：

10.1088/0268-1242/29/9/095003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ge2Sb2Te5 (GST) phase change nanowires have been fabricated using a top-down spacer etch process. This approach enables controls over the dimension and location of the nanowires without affecting the electrical properties. Phase change devices based on these nanowires have been used to systematically investigate the contact resistance between GST phase change material and TiN metal electrodes. The specific contact resistance was found to be 7.96 x 10(-5) Omega cm(2) for crystalline GST and 6.39 x 10(-2) Omega cm(2) for amorphous GST. The results suggest that contact resistance plays a dominant role in the total resistance of GST memory device in both crystalline and amorphous states.

引用

页数：8

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