Growth of high-quality ZnTe layers by MOVPE

被引：15
作者：
Gheyas, SI
Hirano, S
Nishio, M
Ogawa, H
机构：
[1] SAGA UNIV, DEPT ELECT ENGN, FAC SCI & ENGN, SAGA 840, JAPAN
[2] INST MOL SCI, OKAZAKI, AICHI 444, JAPAN
来源：
APPLIED SURFACE SCIENCE | 1996年 / 100卷
关键词：
D O I：
10.1016/0169-4332(96)00356-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effects of substrate temperature and transport rate of source materials (dimethylzinc and diethyltellurium) on the growth rate and photoluminescence properties of ZnTe layers grown on the ZnTe (100) substrate by atmospheric pressure MOVPE have been investigated. Strong free exciton emission and Y bands appear predominantly in films grown under low transport rate(e.g., 10-15 mu mol/min) and moderate temperature (e.g., 380 degrees C).
引用
收藏
页码：647 / 651
页数：5
相关论文
共 15 条
[1]   COPPER, THE DOMINANT ACCEPTOR IN REFINED, UNDOPED ZINC TELLURIDE [J].
DEAN, PJ .
JOURNAL OF LUMINESCENCE, 1979, 21 (01) :75-83
[2]   Aluminum doping of ZnTe grown by MOVPE [J].
Gheyas, SI ;
Hirano, S ;
Nishio, M ;
Ogawa, H .
APPLIED SURFACE SCIENCE, 1996, 100 :634-638
[3]   PHOTOLUMINESCENCE PROPERTIES OF ZNTE LAYERS GROWN BY PHOTO-ASSISTED METALORGANIC VAPOR-PHASE EPITAXY [J].
GHEYAS, SI ;
IKEJIRI, M ;
OGATA, T ;
OGAWA, H ;
NISHIO, M .
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :576-581
[4]   ANALYSIS OF STRAIN AND IMPURITY DISTRIBUTION IN II-VI EPILAYERS WITH OPTICAL METHODS [J].
KUDLEK, G ;
GUTOWSKI, J .
JOURNAL OF LUMINESCENCE, 1992, 52 (1-4) :55-69
[5]   THE MOVPE GROWTH AND DOPING OF ZNTE [J].
KUHN, W ;
WAGNER, HP ;
STANZL, H ;
WOLF, K ;
WORLE, K ;
LANKES, S ;
BETZ, J ;
WORZ, M ;
LICHTENBERGER, D ;
LEIDERER, H ;
GEBHARDT, W ;
TRIBOULET, R .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) :A105-A108
[6]   DEFECTS IN ZN FIRED ZNTE - DETECTION OF A DOUBLE ACCEPTOR (SITE QUESTIONABLE) [J].
MAGNEA, M ;
PAUTRAT, JL ;
DANG, LS ;
ROMESTAIN, R ;
DEAN, PJ .
SOLID STATE COMMUNICATIONS, 1983, 47 (09) :703-707
[7]   LUMINESCENCE DUE TO LATTICE-MISMATCH DEFECTS IN ZNTE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
NAUMOV, A ;
WOLF, K ;
REISINGER, T ;
STANZL, H ;
GEBHARDT, W .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) :2581-2583
[8]   LUMINESCENCE FROM STRUCTURAL DEFECTS IN HETEROEPITAXIAL MOVPE-GROWN ZNTE [J].
NAUMOV, A ;
WOLF, K ;
REISINGER, T ;
STANZL, H ;
WAGNER, HP ;
GEBHARDT, W .
PHYSICA B, 1993, 185 (1-4) :250-254
[9]   EFFECT OF AR LASER-ILLUMINATION UPON ZNTE GROWTH IN ATMOSPHERIC-PRESSURE MOVPE [J].
NISHIO, M ;
OGAWA, H ;
YOSHIDA, A .
JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :284-288
[10]   LOW-PRESSURE MOCVD GROWTH OF ZNTE AND OBSERVATION OF GAS REACTION [J].
NISHIO, M ;
OGAWA, H ;
YOSHIDA, A .
VACUUM, 1990, 41 (1-3) :715-717
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