Structural and physical properties of InAlAs quantum dots grown on GaAs

被引：1

作者：

Vasile, B. S. ^{[1
]}

Ben Daly, A. ^{[2
]}

Craciun, D. ^{[3
]}

Alexandrou, I. ^{[4
]}

Lazar, S. ^{[4
]}

Lemaitre, A. ^{[5
]}

Maaref, M. A. ^{[2
]}

Iacomi, F. ^{[6
]}

Craciun, V. ^{[5
]}

机构：

[1] Univ Politehn Bucuresti, Natl Res Ctr Food Safety, Fac Appl Chem & Mat Sci, Bucharest, Romania

[2] Univ Carthage, Inst Preparatoire Etud Sci & Tech, Lab Mat Mol & Applicat, BP 51, Tunis 2070, Tunisia

[3] Natl Inst Laser Plasma & Radiat Phys, Magurele, Romania

[4] Thermo Fisher Sci, Mat & Struct Anal, European NanoPort, Achtseweg Noord 5, NL-5651 GG Eindhoven, Netherlands

[5] CNRS, UPR 20, Lab Photon & Nanostruct, Route Nozay, F-91460 Marcoussis, France

[6] Alexandru Ioan Cuza Univ, Fac Phys, Iasi, Romania

来源：

PHYSICA B-CONDENSED MATTER | 2018年 / 535卷

关键词：

Type-II quantum dots; Photoluminescence; High-resolution X-ray diffraction; High-resolution transmission electron microscopy; Reciprocal space mapping; MOLECULAR-BEAM EPITAXY; PHOTOLUMINESCENCE; ISLANDS; INGAAS; GE;

D O I：

10.1016/j.physb.2017.07.054

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Quantum dots (QDs), which have particular physical properties due to the three dimensions confinement effect, could be used in many advanced optoelectronic applications. We investigated the properties of InAlAs/AlGaAs QDs grown by molecular beam epitaxy on GaAs/Al0.5Ga0.5As layers. The optical properties of QDs were studied by low-temperature photoluminescence (PL). Two bandgap transitions corresponding to the X-Sh and X-Ph energy structure were observed. The QDs structure was investigated using highresolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). HRXRD investigations showed that the layers grew epitaxially on the substrate, with no relaxation. HRTEM investigations confirmed the epitaxial nature of the grown structures. In addition, it was revealed that the In atoms aggregated in some prismatic regions, forming areas of high In concentration, that were still in perfect registry with the substrate.

引用

页码：262 / 267

页数：6

共 24 条

[1]

Ahamad T., 2016, APPL PHYS B, P122

[2] Power density and temperature effects on the photoluminescence spectra of InAlAs/GaAlAs quantum dots [J].

Ben Daly, A. ;

Riahi, H. ;

Bernardot, F. ;

Barisien, T. ;

Galopin, E. ;

Lemaitre, A. ;

Maaref, M. A. ;

Testelin, C. .

SUPERLATTICES AND MICROSTRUCTURES, 2017, 104 :321-330

[3] SELECTIVE EXCITON FORMATION IN THIN GAAS/ALXGA1-XAS QUANTUM-WELLS [J].

BLOM, PWM ;

VANHALL, PJ ;

SMIT, C ;

CUYPERS, JP ;

WOLTER, JH .

PHYSICAL REVIEW LETTERS, 1993, 71 (23) :3878-3881

[4] LOW-TEMPERATURE SYNTHESIS OF GE NANOCRYSTALS IN SIO2 [J].

CRACIUN, V ;

BOYD, IW ;

READER, AH ;

VANDENHOUDT, DEW .

APPLIED PHYSICS LETTERS, 1994, 65 (25) :3233-3235

[5] Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots [J].

Dai, Liping ;

Bremner, Stephen P. ;

Tan, Shenwei ;

Wang, Shuya ;

Zhang, Guojun ;

Liu, Zongwen .

NANOSCALE RESEARCH LETTERS, 2014, 9 :1-5

[6] Characterization of encapsulated quantum dots via electron channeling contrast imaging [J].

Deitz, Julia I. ;

Carnevale, Santino D. ;

De Graef, Marc ;

McComb, David W. ;

Grassman, Tyler J. .

APPLIED PHYSICS LETTERS, 2016, 109 (06)

[7] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[8] VISIBLE PHOTOLUMINESCENCE FROM N-DOT ENSEMBLES AND THE LINEWIDTH OF ULTRASMALL ALYIN1-YAS ALXGA1-XAS QUANTUM DOTS [J].

FAFARD, S ;

LEON, R ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (11) :8086-8089

[9]

Fafard S, 1996, APPL PHYS LETT, V68, P991, DOI 10.1063/1.116122

[10] HIGH-RESOLUTION DIFFRACTION-SPACE MAPPING AND TOPOGRAPHY [J].

FEWSTER, PF .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (03) :121-127

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