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Spontaneously formed high-performance charge-transport layers of organic single-crystal semiconductors on precisely synthesized insulating polymers
被引:15
作者:

Makita, Tatsuyuki
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Sasaki, Masayuki
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Annaka, Tatsuro
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Sasaki, Mari
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Matsui, Hiroyuki
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Mitsui, Chikahiko
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Kumagai, Shohei
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Watanabe, Shun
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan
PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Hayakawa, Teruaki
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PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan
Tokyo Inst Technol, Dept Organ & Polymer Mat, Meguro Ku, 2-12-1-S8-36 O Okayama, Tokyo 1528552, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Okamoto, Toshihiro
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan
PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan

Takeya, Jun
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Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan
机构:
[1] Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2778561, Japan
[2] PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan
[3] Tokyo Inst Technol, Dept Organ & Polymer Mat, Meguro Ku, 2-12-1-S8-36 O Okayama, Tokyo 1528552, Japan
关键词:
FIELD-EFFECT TRANSISTORS;
THIN-FILM TRANSISTORS;
SELF-ASSEMBLED MONOLAYERS;
BLEND;
THRESHOLD;
D O I:
10.1063/1.4981774
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Charge-transporting semiconductor layers with high carrier mobility and low trap-density, desired for high-performance organic transistors, are spontaneously formed as a result of thermodynamic phase separation from a blend of p-conjugated small molecules and precisely synthesized insulating polymers dissolved in an aromatic solvent. A crystal film grows continuously to the size of centimeters, with the critical conditions of temperature, concentrations, and atmosphere. It turns out that the molecular weight of the insulating polymers plays an essential role in stable film growth and interfacial homogeneity at the phase separation boundary. Fabricating the transistor devices directly at the semiconductor-insulator boundaries, we demonstrate that the mixture of 3,11-didecyldinaphtho[ 2,3-d: 2',3'-d'] benzo[1,2-b: 4,5-b'] dithiophene and poly(methyl methacrylate) with the optimized weight-average molecular weight shows excellent device performances. The spontaneous phase separation with a one-step fabrication process leads to a high mobility up to 10 cm(2) V-1 s(-1) and a low subthreshold swing of 0.25V dec(-1) even without any surface treatment such as self-assembled monolayer modifications on oxide gate insulators. Published by AIP Publishing.
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页数:5
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Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, POSTECH Organ Elect Lab, Pohang 790784, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, POSTECH Organ Elect Lab, Pohang 790784, South Korea

Kim, Sangwon
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Inha Univ, Dept Polymer Sci & Engn, Inchon 402751, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, POSTECH Organ Elect Lab, Pohang 790784, South Korea

Kim, Se Hyun
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Yeungnam Univ, Dept Nano Med & Polymer Mat, Kyongsan 712749, South Korea Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, POSTECH Organ Elect Lab, Pohang 790784, South Korea

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