Non-equilibrium charge carriers generation - recombination mechanisms at the interface of the SnO2/GaSe heterojunction

被引：9
作者：
Cuculescu, Elmira [1 ]
Evtodiev, Igor [1 ]
Caraman, Mihail [2 ]
机构：
[1] Moldova State Univ, Fac Phys, MD-2009 Kishinev, Moldova
[2] Univ Bacau, Dept Engn, Bacau 600115, Romania
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 07期
关键词：
SnO2; GaSe; Heterojunction; Photoluminescence; Photocurrent; GASE; PHOTOCONDUCTIVITY; HETEROSTRUCTURES; LAYER;
D O I：
10.1016/j.tsf.2008.11.066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The interface of the SnO2/GaSe heterojunctions, having SnO2 layer obtained by different deposition methods have been studied using the photoluminescence and photocurrent spectral distribution. The SnO2/GaSe structures are photosensitive in the 1.7 divided by 3.6 eV spectral range and reveal its maximum value for the heterojunctions with magnetron sputtered SnO2 layer. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：2515 / 2518
页数：4
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