Electronic structure of delta-doped quantum well as a function of temperature

We report on the electronic structure of a delta-doped quantum well of B in Si as a function of temperature from 0 K to room temperature. The calculation is carried out self-consistently in the framework of a Hartree approximation. The energy levels and the occupation number of the discrete states is reported. We conclude that the temperature is not an important factor below 60 K. If temperature is greater than 80 K the level positions are shifted but the changes in carrier concentration are not significant. We give a possible qualitative explanation of the widths of the intersubband absorption peaks. (C) 1997 American Institute of Physics.