On the reliability of ZrO2 films for VLSI applications

被引：4

作者：

Caputo, D ^{[1
]}

Irrera, F ^{[1
]}

机构：

[1] Univ Roma La Sapienza, Dipartimento Ingn Elettron, I-00184 Rome, Italy

来源：

MICROELECTRONICS RELIABILITY | 2004年 / 44卷 / 05期

关键词：

D O I：

10.1016/j.microrel.2003.12.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a systematic investigation of the effects of electrical stress on reliability of zirconium oxide films. In particular, we monitored stress-induced leakage current, high-field conduction and capacitance curves as function of the applied voltage and the injected charge. Defect density in the bulk oxide have been extracted from measurements by means of literature models. As a result, a square root time dependence of the stress-induced defects has been found. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：739 / 745

页数：7

共 21 条

[1] Investigation and modeling of stressed thermal oxides [J].

Caputo, D ;

Irrera, F .

MICROELECTRONICS RELIABILITY, 2002, 42 (03) :327-333

[2] Investigation of defects in deposited oxides with a frequency resolved capacitance technique [J].

Caputo, D ;

Irrera, F ;

Palma, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (10) :2342-2347

[3]

CHIN A, 2000, VLSI S, V23, P16

[4] CORRELATION OF STRESS-INDUCED LEAKAGE CURRENT IN THIN OXIDES WITH TRAP GENERATION INSIDE THE OXIDES [J].

DUMIN, DJ ;

MADDUX, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :986-993

[5]

EVANEGLOU EK, UNPUB

[6]

HINKLE CL, 2003, P INS FILMS SEM W13

[7] Transport model in n++-poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications [J].

Irrera, F ;

Marangelo, L .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :372-377

[8] Degradation kinetics of thermal oxides [J].

Irrera, F .

APPLIED PHYSICS LETTERS, 2001, 79 (02) :182-184

[9]

Kauerauf T, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P521, DOI 10.1109/IEDM.2002.1175894

[10] Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3Gate stacks with TiN electrodes [J].

Kerber, A ;

Cartier, E ;

Degraeve, R ;

Pantisano, L ;

Roussel, P ;

Groeseneken, G .

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, :76-77

← 1 2 3 →