Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs

被引：7

作者：

Borghese, A. ^{[1
]}

Riccio, M. ^{[1
]}

Longobardi, G. ^{[2
]}

Maresca, L. ^{[1
]}

Breglio, G. ^{[1
]}

Irace, A. ^{[1
]}

机构：

[1] Univ Naples Federico II, Dept Elect Engn & Informat Technol, Naples, Italy

[2] Univ Cambridge, Cambridge, England

来源：

MICROELECTRONICS RELIABILITY | 2020年 / 114卷

关键词：

III-V semiconductors - Leakage currents - Gallium nitride;

D O I：

10.1016/j.microrel.2020.113762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an effective, yet simple, methodology for the temperature monitoring of voltage-driven p-GaN HEMTs based on gate leakage current sensing is presented. The proposed solution has been verified by SPICE electrothermal simulations and experiments on commercial devices within and out of safe operating area (SOA). Moreover, the monitoring circuit can be effectively adopted for commercially available normally-off p-GaN HEMTs with no need of modifying the recommended gate driver circuit.

引用

页数：5

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