The energy band diagrams of PtSi-Si barrier with a heavily-doped surface nanolayer formed by recoil implantation

The development of Schottky barrier technology for creation of IR-photo detectors is caused by reduction of a potential barrier height used by formation of heavily-doped thin layer near to the semiconductor surface. We propose for this aim to form heavily-doped nanolayer in p-Si by recoil implantation of boron. Boron rim-thick film was deposited on the Si sample surfaces by cathode sputtering. After that the samples were irradiated by high intensity Al+ beams extracted from pregenerated explosion-emission plasma. The samples are examined by secondary ion mass-spectrometry (SIMS). It is experimental established that profile of impirity distribution in surface layer is exponential. The doping concentration at the silicide/silicon interface is 10(18)-10(20) cm(-3) and thickness of surface layer is 8-12 nm. The energy band diagrams of a PtSi - p-Si Schottky barrier with high-doped surface layer formed by recoil implantation were calculated for different parameters of barrier. It is shown, that effective barrier heights in PtSi-Si with recoil implantation formed surface 10 rim layer at surface concentration order 10(20) cm(-3) is reduce to 0.13 eV, corresponding to a cutoff wavelength of 9.5 mum. Thus, the cutoff wavelength of the PtSi Schottky infrared detectors has been extended to the long wavelength infrared region by incorporating a p(+) doping layer with exponential profile of impirity distribution at the silicide/silicon interface.