Correlation between fixed positive charge and hot-electron immunity for nitridized oxides

被引：10

作者：

Hook, TB

Watson, K

Lee, E

Martin, D

Ganesh, R

Kim, S

Ray, A

机构：

[1] GASON INT,SAN JOSE,CA 95134

[2] IBM CORP,SEMICOND RES DEV CTR,HOPEWELL JCT,NY 12533

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 10期

关键词：

D O I：

10.1109/55.624916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitrogen in the gate oxide of a 3.3-V, 0.4-mu m CMOS technology was modulated in a variety of ways, including treatments with N2O, NO, oxidation at elevated pressure, and post-oxidation annealing, A direct correlation was observed between the fixed positive charge and the hot-electron immunity, regardless of the means by which the nitrogen was incorporated, or subsequently annealed, The implication is that one benefit and one drawback of nitrided-oxide gate oxides are inextricably Linked, with significant effects on the transistor design.

引用

页码：471 / 473

页数：3

共 12 条

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