Effect of pressure and Al doping on structural and optical properties of ZnO nanowires synthesized by chemical vapor deposition

被引：36

作者：

Mohanta, Antaryami ^{[1
]}

Simmons, Jay G., Jr. ^{[2
]}

Everitt, Henry O. ^{[3
]}

Shen, Gang ^{[4
]}

Kim, Seongsin Margaret ^{[4
]}

Kung, Patrick ^{[4
]}

机构：

[1] US Army Aviat & Missile Res Dev & Engn Ctr AMRDEC, Res Participat Program, Oak Ridge Inst Sci & Educ, Redstone Arsenal, AL 35898 USA

[2] Duke Univ, Dept Chem, Durham, NC 27708 USA

[3] US Army Aviat & Missile Res Dev & Engn Ctr AMRDEC, Redstone Arsenal, AL 35898 USA

[4] Univ Alabama, Dept Elect & Comp Engn, Tuscaloosa, AL 35487 USA

来源：

JOURNAL OF LUMINESCENCE | 2014年 / 146卷

关键词：

ZnO nanowires; Chemical vapor deposition; Photoluminescence; n-Type doping; Oxygen vacancies; Energy transfer process; PHOTOLUMINESCENCE; TEMPERATURE; LUMINESCENCE; EMISSION; GROWTH; ORIGIN; FILMS;

D O I：

10.1016/j.jlumin.2013.10.028

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The effect of Al doping concentration and oxygen ambient pressure on the structural and optical properties of chemical vapor deposition-grown, Al-doped ZnO nanowires is studied. As Al doping increases, the strength of the broad visible emission band decreases and the UV emission increases, but the growth rate depends on the oxygen pressure in a complex manner. Together, these behaviors suggest that Al doping is effective in reducing the number of oxygen vacancies responsible for visible emission, especially at low oxygen ambient pressure. The intensities and quantum efficiencies of these emission mechanisms are discussed in terms of the effect growth and doping conditions have on the underlying excitonic decay mechanisms. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：470 / 474

页数：5