Microstructure and Electronic Properties of Zinc Nitride Thin Films

被引：4
作者：
Georgiev, Daniel G. [1 ]
Moening, Joseph P. [1 ]
Naleshwar, Sandeepkumar [1 ]
Jayatissa, Ahalapitiya H. [2 ]
机构：
[1] Univ Toledo, Dept Elect Engn & Comp Sci, Mail Stop 308, Toledo, OH 43606 USA
[2] Univ Toledo, Dept Mech Ind & Mfg Engn, Toledo, OH 43606 USA
来源：
2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE | 2009年
关键词：
Zinc nitride; Thin Films; Reactive Sputtering; Optical properties; XPS; AES; Raman spectroscopy; OPTICAL BAND-GAP; ZN3N2; DEFECTS;
D O I：
10.1109/NMDC.2009.5167531
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results from an initial study on the preparation, microstructure, and optical and electrical properties of zinc nitride films are presented. Zinc nitride has a lower bandgap than ZnO and can be fabricated in a thin film form by sputtering and other methods. This material has a potential as a new semiconductor material in photovoltaic, optoelectronic and other applications, offering additional advantages such as environment-friendly processing and potentially low fabrication cost. A main goal of our studies, which are still in progress, is establishing correlations between the fabrication conditions and the structure and relevant properties. Junctions and interfaces with metals or zinc oxide will be of interest as well.
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页码：33 / +
页数：2
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