A study of the effect of tool cutting edge radius on ductile cutting of silicon wafers

被引:69
|
作者
Liu, K.
Li, X. P.
Rahman, M.
Neo, K. S.
Liu, X. D.
机构
[1] Singapore Inst Mfg Technol, Machining Technol Grp, Singapore 638075, Singapore
[2] Natl Univ Singapore, Dept Mech Engn, Singapore 119260, Singapore
关键词
edge radius; diamond tool; silicon wafer; ductile cutting; TRANSITION; SYSTEMS;
D O I
10.1007/s00170-005-0364-7
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Ductile mode cutting of silicon wafers can be achieved under certain cutting conditions and tool geometry. An experimental investigation of the critical undeformed chip thickness in relation to the tool cutting edge radius for the brittle-ductile transition of chip formation in cutting of silicon wafers is presented in this paper. Experimental tests for cutting of silicon wafers using diamond tools of different cutting edge radii for a range of undeformed chip thickness are conducted on an ultra-precision lathe. Both ductile and brittle mode of chip formation processes are observed in the cutting tests. The results indicate that ductile cutting of silicon can be achieved at certain values of the undeformed chip thickness, which depends on the tool cutting edge radius. It is found that in cutting of silicon wafers with a certain tool cutting edge radius there is a critical value of undeformed chip thickness beyond which the chip formation changes from ductile mode to brittle mode. The ductile-brittle transition of chip formation varies with the tool cutting edge radius. Within the range of cutting conditions in the present study, it has also been found that the larger the cutting edge radius, the larger the critical undeformed chip thickness for the ductile-brittle transition in the chip formation.
引用
收藏
页码:631 / 637
页数:7
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