Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact

被引：65
|
作者：
Gu, Q. L.
Ling, C. C.
Chen, X. D.
Cheng, C. K.
Ng, A. M. C.
Beling, C. D.
Fung, S.
Djurisic, A. B.
Lu, L. W.
Brauer, G.
Ong, H. C.
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[2] Forschungszentrum Dresden Rossendorf, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany
[3] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期
关键词：
D O I：
10.1063/1.2715025
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Conversion of the Au/n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy. H2O2 treatment did not affect the carbon surface contamination or the E-C-0.31 eV deep level, but it resulted in a significant decrease of the surface OH contamination and the formation of vacancy-type defects (Zn vacancy or vacancy cluster) close to the surface. The formation of a rectifying contact can be attributed to the reduced conductivity of the surface region due to the removal of OH and the formation of vacancy-type defects. (c) 2007 American Institute of Physics.
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页数：3
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