Spectroscopic ellipsometry study of hydrogenated amorphous silicon carbon alloy films deposited by plasma enhanced chemical vapor deposition

被引：22

作者：

Basa, D. K. ^{[1
]}

Abbate, G. ^{[2
,3
]}

Ambrosone, G. ^{[2
,3
]}

Coscia, U. ^{[2
,4
]}

Marino, A. ^{[2
,3
]}

机构：

[1] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India

[2] Univ Naples Federico 2, Dipartimento Sci Fis, I-80126 Naples, Italy

[3] CNR INFM CRS Coherentia, I-80126 Naples, Italy

[4] CNISM Unita Napoli, I-80126 Naples, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 02期

关键词：

amorphous semiconductors; dielectric function; ellipsometry; plasma CVD; semiconductor thin films; silicon compounds; wide band gap semiconductors; H THIN-FILMS; A-C-H; OPTICAL-PROPERTIES; SEMICONDUCTORS; SI; MICROSTRUCTURE; DIELECTRICS; PARAMETERS; GERMANIUM; CONSTANTS;

D O I：

10.1063/1.3277016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of the hydrogenated amorphous silicon carbon alloy films, prepared by plasma enhanced chemical vapor deposition technique from silane and methane gas mixture diluted in helium, have been investigated using variable angle spectroscopic ellipsometry in the photon energy range from 0.73 to 4.59 eV. Tauc-Lorentz model has been employed for the analysis of the optical spectra and it has been demonstrated that the model parameters are correlated with the carbon content as well as to the structural properties of the studied films.

引用

页数：6

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